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The Infineon IKFW60N65ES5XKSA1 is a TRENCHSTOPTM 5 Advanced Isolation IGBT copacked with a full current rated RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, 77A DC collector current at Th=25°C, and a VCEsat of 1.35V at Tvj=25°C. The device supports a maximum junction temperature of 175°C and includes Pb-free lead plating compliant with RoHS standards.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging and compliance details. Ensure that industrial application validation requirements align with JEDEC47/20/22 standards before procurement. Confirm thermal management specifications match the intended heatsink temperature conditions.
Select this component for designs requiring advanced isolation and high-speed switching capabilities. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the integrated RAPID 1 diode characteristics to determine if it meets the reverse recovery requirements of the target circuit topology.
This part belongs to the TRENCHSTOPTM 5 series from Infineon Technologies. It utilizes silicon technology and is housed in a PG-HSIP247-3-2 package. The product is qualified for industrial applications and represents an evolution in high-speed soft-switching IGBTs with integrated diodes.
Official datasheets describe this device as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility and thermal resistance values when substituting older models.