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The IKFW75N65EH5XKSA1 is a TRENCHSTOPTM 5 IGBT copacked with a RAPID 1 fast and soft antiparallel diode. It features a PG-HSIP247-3-2 package with 2500 Vrms electrical isolation. Key parameters include a collector-emitter voltage of 650 V, a continuous collector current of 80 A at Th=25°C, and a saturation voltage of 1.65 V at Tvj=25°C. The maximum junction temperature is 175°C, and the power dissipation is 148 W at Th=25°C.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the application environment respects the maximum ratings, particularly the 175°C junction temperature limit. Confirm thermal management requirements align with the specified thermal resistance values for the PG-HSIP247-3-2 package.
Select this component for applications requiring high-speed switching with low reverse recovery charge from the integrated diode. The advanced isolation makes it suitable for designs needing galvanic separation without additional discrete isolators. Consider the thermal performance and saturation voltage when designing for high-efficiency power conversion systems.
This device belongs to the TRENCHSTOPTM 5 family, designed as a plug-and-play replacement for previous generation IGBTs. It utilizes silicon technology and is qualified for industrial applications according to JEDEC standards. The product spectrum includes PSpice models for simulation purposes.
Officially documented as a plug-and-play replacement for previous generation IGBTs within the TRENCHSTOPTM 5 family context.