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The IKN01N60RC2ATMA1 is a 600 V Reverse Conducting Drive 2 IGBT discrete with monolithically integrated diode in PG-SOT223-3 package. Collector-emitter voltage (VCE) is 600 V, DC collector current (IC) is 2.2 A at Tc=25°C, and pulsed collector current (ICpulse) is 3 A. Collector-emitter saturation voltage (VCEsat) is typically 2.0 V at IC=1 A, VGE=15 V, Tvj=25°C. Gate-emitter threshold voltage (VGEth) is typically 5.0 V. Diode forward voltage (VF) is typically 1.85 V at IF=1 A, Tvj=25°C. Operating junction temperature range is -40°C to 150°C. Power dissipation (Ptot) is 5.1 W at Tc=25°C.
Verify the component against official Infineon datasheet specifications before procurement. Confirm that the ordering suffix ATMA1 corresponds to the reel packaging format as documented by the manufacturer. Ensure compliance with JEDEC moisture sensitivity level requirements during storage and handling procedures.
Select this component for low-power residential applications requiring integrated freewheeling functionality. Evaluate thermal resistance values based on PCB footprint constraints. Verify switching frequency compatibility within the 1 kHz to 20 kHz operational range. Check short-circuit withstand time requirements against system protection capabilities.
This device belongs to the Reverse Conducting Drive 2 family from Infineon Technologies. It combines an N-channel IGBT with a fast recovery diode in a single semiconductor die. The technology targets cost-effective solutions for home appliances and general-purpose motor drives where space efficiency and simplified gate drive circuits are prioritized.
No public confirmed substitute part numbers are available in the provided documentation.