SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKN04N60RC2ATMA1 is a 600 V Reverse Conducting Drive 2 (RC-D2) IGBT with an integrated diode in a PG-SOT223-3 package. It features a maximum collector-emitter voltage of 600 V and a continuous DC collector current of 7.5 A at 25 °C case temperature. The device has a typical gate charge of 24 nC, a collector-emitter saturation voltage of 2 V at 4 A, and a forward voltage of 1.85 V for the integrated diode. Operating junction temperatures range from -40 °C to 150 °C, with a short-circuit withstand time of 3 µs.
Verify the exact ordering suffix ATMA1 during procurement to confirm tape-and-reel packaging specifications. Confirm RoHS compliance and Pb-free lead plating status through official Infineon documentation before finalizing orders. Ensure that industrial application validation aligns with JEDEC standards specified in the product qualification report.
Select this component for applications requiring a compact solution combining an IGBT and a freewheeling diode in a single surface-mount package. Evaluate thermal resistance values based on the specific PCB footprint and copper area available. Consider the operating frequency range up to 20 kHz when designing the gate drive circuitry to optimize switching losses.
This part belongs to Infineon's Reverse Conducting Drive 2 family, designed to replace discrete IGBT and diode combinations. It utilizes silicon technology and is intended for cost-effective power switching in residential and general-purpose drive applications. The PG-SOT223-3 package offers a balance between thermal performance and board space efficiency.
Direct substitutes within the same RC-D2 family include IKN01N60RC2ATMA1 and IKD10N60RC2ATMA1. Verify pinout compatibility and electrical ratings such as current handling and voltage breakdown before implementing any cross-model replacements in existing designs.
The device supports a short-circuit withstand time of 3 µs under specified conditions.
No, the product is not qualified according to AEC-Q100 or AEC-Q101 standards and is intended for industrial applications.
The typical gate charge is 24 nC at a collector current of 4 A and a collector-emitter voltage of 480 V.