IKN04N60RC2ATMA1

IKN04N60RC2ATMA1

$1.01
  • Description:IGBT 600V 7.5A SOT223-3
  • Series:-

SKU:cf6277c27ce1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 7.5A SOT223-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):7.5 A
  • Current - Collector Pulsed (Icm):12:00 AM
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 4A
  • Power - Max:6.8 W
  • Switching Energy:95µJ (on), 62µJ (off)
  • Input Type:Standard
  • Gate Charge:24 nC
  • Td (on/off) @ 25°C:8ns/126ns
  • Test Condition:400V, 4A, 49Ohm, 15V
  • Reverse Recovery Time (trr):39 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:PG-SOT223-3
  • Grade:-
  • Qualification:-

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IKN04N60RC2ATMA1

Overview

The IKN04N60RC2ATMA1 is a 600 V Reverse Conducting Drive 2 (RC-D2) IGBT with an integrated diode in a PG-SOT223-3 package. It features a maximum collector-emitter voltage of 600 V and a continuous DC collector current of 7.5 A at 25 °C case temperature. The device has a typical gate charge of 24 nC, a collector-emitter saturation voltage of 2 V at 4 A, and a forward voltage of 1.85 V for the integrated diode. Operating junction temperatures range from -40 °C to 150 °C, with a short-circuit withstand time of 3 µs.

Feature Summary

  • Monolithically integrated reverse conducting diode eliminates external component requirements
  • Tight parameter distribution ensures consistent performance across manufacturing batches
  • Humidity robust design enhances reliability under varying environmental conditions
  • Short circuit capability provides protection against transient overcurrent events

Applications

  • Ceiling fans
  • Countertop appliances such as mixers
  • Kitchen hoods
  • Refrigerators
  • Residential air conditioning indoor units
  • Washing machines
  • General purpose drives

Procurement Notes

Verify the exact ordering suffix ATMA1 during procurement to confirm tape-and-reel packaging specifications. Confirm RoHS compliance and Pb-free lead plating status through official Infineon documentation before finalizing orders. Ensure that industrial application validation aligns with JEDEC standards specified in the product qualification report.

Selection Notes

Select this component for applications requiring a compact solution combining an IGBT and a freewheeling diode in a single surface-mount package. Evaluate thermal resistance values based on the specific PCB footprint and copper area available. Consider the operating frequency range up to 20 kHz when designing the gate drive circuitry to optimize switching losses.

Part Context

This part belongs to Infineon's Reverse Conducting Drive 2 family, designed to replace discrete IGBT and diode combinations. It utilizes silicon technology and is intended for cost-effective power switching in residential and general-purpose drive applications. The PG-SOT223-3 package offers a balance between thermal performance and board space efficiency.

Replacement Considerations

Direct substitutes within the same RC-D2 family include IKN01N60RC2ATMA1 and IKD10N60RC2ATMA1. Verify pinout compatibility and electrical ratings such as current handling and voltage breakdown before implementing any cross-model replacements in existing designs.

FAQ

What is the maximum short-circuit withstand time for the IKN04N60RC2?

The device supports a short-circuit withstand time of 3 µs under specified conditions.

Is the IKN04N60RC2 qualified for automotive applications?

No, the product is not qualified according to AEC-Q100 or AEC-Q101 standards and is intended for industrial applications.

What is the typical gate charge value for this IGBT?

The typical gate charge is 24 nC at a collector current of 4 A and a collector-emitter voltage of 480 V.

IKN04N60RC2ATMA1IKN04N60RC2ATMA1
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