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The IKP06N60TXKSA1 is a single IGBT with an integrated anti-parallel diode from Infineon's TRENCHSTOP series. It features Fieldstop technology and a soft, fast recovery Emitter Controlled HE diode. The device operates at a maximum collector-emitter voltage of 600V and supports a continuous DC collector current of 12A at 25°C case temperature. It has a typical saturation voltage of 1.5V and withstands short-circuit conditions for up to 5µs. The component is housed in a PG-TO220-3 package and supports a maximum junction temperature of 175°C.
Verify the specific ordering suffix against official documentation to confirm exact packaging or qualification variants. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure thermal management solutions align with the specified thermal resistance values for the intended operating environment.
Select this component for applications requiring low conduction losses and high temperature stability. The 600V rating and 12A current capacity suit moderate power variable speed drives. Consider the 5µs short-circuit withstand time for robust protection schemes. Evaluate gate resistor requirements to optimize switching speeds against EMI constraints.
This part belongs to the TRENCHSTOP™ Series, utilizing advanced silicon technology for 600V applications. It is designed as a low-loss solution for hard-switching environments. The product spectrum includes PSpice models for simulation. The marking on the package typically indicates 'K06T60' for identification purposes.
IKP06N60T