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The IKP15N65H5XKSA1 is a single IGBT with an integrated antiparallel diode in the PG-TO220-3 package. It features TRENCHSTOP™ 5 technology and a 650V breakdown voltage. The collector-emitter saturation voltage is 1.65V at 25°C, with a maximum junction temperature of 175°C. DC collector current reaches 30A at 25°C case temperature. Power dissipation is 105W at 25°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and Pb-free lead plating requirements before finalizing procurement specifications.
Select this component for industrial power control applications requiring high efficiency in hard switching environments. Ensure thermal management supports the specified junction temperature limits and power dissipation ratings under operating conditions.
This device belongs to the High-speed 5 IGBT series utilizing TRENCHSTOP™ technology. It is designed as a plug-and-play replacement for previous generation IGBTs while offering improved performance metrics in mid-to-high frequency converter designs.
Official datasheets indicate it serves as a direct replacement for previous generation IGBTs within the same voltage and current class.