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The IKP20N60TXKSA1 is a single N-channel IGBT in the TRENCHSTOP™ series, utilizing Fieldstop technology for 600V applications. It features an integrated anti-parallel Emitter Controlled HE diode and is housed in a PG-TO220-3 package. Key electrical parameters include a collector-emitter voltage of 600V, a continuous collector current of 41A at 25°C, and a saturation voltage of 1.5V. The device supports a maximum junction temperature of 175°C, offers a short-circuit withstand time of 5µs, and has a power dissipation rating of 166W.
Verify the specific suffix 'XKSA1' against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering code matches the exact PG-TO220-3 package variant required for your PCB footprint. Cross-reference the datasheet revision to confirm thermal resistance values align with your system design constraints.
Select this component for designs requiring high switching speeds and low conduction losses in 600V systems. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Consider the 5µs short-circuit capability when designing protection logic for inductive loads.
This part belongs to the IKP/TRENCHSTOP™ family of discrete IGBTs manufactured by Infineon Technologies. It utilizes silicon technology optimized for medium-power applications. The PG-TO220-3 package provides a balance between thermal performance and mounting flexibility for through-hole assembly.
IKP20N60T
The device supports a short-circuit withstand time of 5µs under specified conditions (VGE=15V, VCC≤400V, Tj≤150°C).
Yes, it integrates an anti-parallel Emitter Controlled HE diode with soft and fast recovery characteristics.
The typical VCE(sat) is 1.5V at Tj=25°C and IC=20A.