IKP20N65F5XKSA1

Overview

The IKP20N65F5 is a High-speed 5 FAST IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device is housed in a PG-TO220-3 package. Key electrical parameters include a DC collector current of 42A at 25°C case temperature, a collector-emitter saturation voltage (VCEsat) of 1.6V at 25°C, and a gate charge (QG) of 48nC.

Feature Summary

• High-speed F5 technology optimized for best-in-class efficiency in hard switching and resonant topologies
• Copackaged with a RAPID 1 fast and soft anti-parallel diode
• Qualified according to JEDEC standards for target applications

Applications

• Solar converters
• Uninterruptible power supplies
• Welding converters
• Mid to high range switching frequency converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within the fifth generation TRENCHSTOP family. Ensure the application circuit can accommodate the specified thermal resistance values and that the operating conditions remain within the recommended 80% of maximum ratings for optimal lifetime and reliability.

Part Context

This part belongs to the High-speed 5 FAST IGBT series utilizing TRENCHSTOP™ 5 technology. It integrates an IGBT chip with a RAPID 1 anti-parallel diode in a single PG-TO220-3 package, designed specifically for industrial power control applications requiring efficient switching performance.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. No direct public substitute part numbers are confirmed in the provided source material.