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The IKP30N65H5 is a high-speed IGBT in TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device provides a DC collector current of 55A at 25°C case temperature and 35A at 100°C. The collector-emitter saturation voltage is 1.65V at 25°C. It utilizes PG-TO220-3 packaging.
Verify the specific datasheet revision against the manufacturer's official records before finalizing procurement. Confirm that the PG-TO220-3 package dimensions align with the intended PCB layout. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating conditions.
Select this component for designs requiring robust performance in mid-to-high frequency switching environments. The integrated antiparallel diode simplifies circuit topology by eliminating the need for external freewheeling diodes. Evaluate thermal constraints carefully, as continuous current capability decreases significantly at elevated case temperatures.
This part belongs to Infineon's High Speed Fifth Generation series utilizing TRENCHSTOP 5 technology. It serves as a plug-and-play replacement for previous generation IGBTs in similar voltage and current ratings. The product spectrum includes PSpice models for simulation purposes.
Official documentation identifies this component as a direct replacement for previous generation IGBTs within the same voltage and current class. Verify pinout compatibility and thermal characteristics when substituting older discrete packages.
The maximum operating junction temperature is 175°C.
Yes, it is copacked with a RAPID 1 fast and soft antiparallel diode.
The typical gate charge is 70nC under standard test conditions.