IKQ120N120CH7XKSA1

$12.78

Description：IGBT
Series：-

SKU:67706db1400b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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IKQ120N120CH7XKSA1

Overview

The IKQ120N120CH7XKSA1 is a high-speed 1200 V IGBT with an integrated emitter-controlled diode, utilizing TRENCHSTOP™ IGBT 7 technology. It features a collector-emitter saturation voltage of 1.7 V at 25°C and a maximum DC collector current of 170 A at 25°C. The device supports a maximum junction temperature of 175°C and operates within a -40°C to 175°C range. Key electrical parameters include a gate charge of 834 nC, turn-on energy of 7.77 mJ, and turn-off energy of 2.95 mJ at 25°C. The integrated diode exhibits a forward voltage of 2.5 V and a reverse recovery charge of 3.45 µC at 25°C. It is housed in a TO-247PLUS-3Pin package.

Feature Summary

Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode
Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type)
Easy paralleling capability due to positive temperature coefficient in VCEsat

Applications

Industrial UPS
EV-Charging
String inverter
Welding

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead times and packaging details. Ensure compliance with JEDEC47/20/22 industrial application standards during procurement. Confirm RoHS compliance and Pb-free lead plating specifications match project requirements before finalizing orders.

Selection Notes

Select this component for high-efficiency hard switching applications requiring fast commutation. The positive temperature coefficient in VCEsat facilitates easy paralleling for higher current capacity. Verify thermal management capabilities against the specified Rth(j-c) values to ensure operation remains within the 175°C maximum junction temperature limit under expected load conditions.

Part Context

This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It represents a discrete power semiconductor designed for robust industrial environments. The product is qualified according to relevant JEDEC tests for industrial applications, distinguishing it from automotive-specific variants which require separate qualification protocols.