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The IKQ120N65EH7 is a high-speed, low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology device copacked with a soft, fast recovery Emitter Controlled 7 diode. It features a collector current of 120 A and a maximum collector-emitter voltage of 650 V. The component operates within a junction temperature range of -40 °C to 175 °C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.4 V at 25 °C and a gate charge of 251 nC. The integrated diode exhibits a forward voltage of 1.65 V and a reverse recovery time of 82 ns.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure compliance with JEDEC47/20/22 standards for industrial application validation. Confirm that the product is not intended for automotive use as it lacks AEC-Q100 or AEC-Q101 qualification. Check for updated datasheet revisions regarding switching values.
Select this component for designs requiring high efficiency in hard-switching environments. The low saturation voltage reduces conduction losses, while the optimized switching characteristics minimize dynamic losses. Consider the thermal resistance values when designing heat sinks for continuous operation at high case temperatures.
This part belongs to the TRENCHSTOP™ IGBT7 family, which integrates advanced silicon technology with an emitter-controlled diode. It is designed to replace previous generations like TRENCHSTOP™ 5 in high-power industrial applications, offering improved performance in terms of switching speed and thermal management within the PG-TO247-3-PLUS package.
IKY120N65EH7XKSA1
No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents and is intended for industrial applications.
The internal emitter inductance is typically 13 nH, measured 5 mm from the case.
The integrated diode provides very soft, fast recovery characteristics, minimizing reverse recovery energy and peak current.