IKQ120N65EH7XKSA1

IKQ120N65EH7XKSA1

$9.92
  • Description:IGBT TRENCH FS 650V 160A TO247-3
  • Series:TRENCHSTOP™

SKU:39b07437d879 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 160A TO247-3
  • Series:TRENCHSTOP™
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):160 A
  • Current - Collector Pulsed (Icm):480 A
  • Vce(on) (Max) @ Vge, Ic:1.65V @ 15V, 120A
  • Power - Max:498 W
  • Switching Energy:4.2mJ (on), 3.7mJ (off)
  • Input Type:Standard
  • Gate Charge:251 nC
  • Td (on/off) @ 25°C:38ns/287ns
  • Test Condition:400V, 120A, 10Ohm, 15V
  • Reverse Recovery Time (trr):82 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-46
  • Grade:-
  • Qualification:-

Download product information

IKQ120N65EH7XKSA1

Overview

The IKQ120N65EH7 is a high-speed, low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology device copacked with a soft, fast recovery Emitter Controlled 7 diode. It features a collector current of 120 A and a maximum collector-emitter voltage of 650 V. The component operates within a junction temperature range of -40 °C to 175 °C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.4 V at 25 °C and a gate charge of 251 nC. The integrated diode exhibits a forward voltage of 1.65 V and a reverse recovery time of 82 ns.

Feature Summary

  • High speed and low saturation voltage utilizing TRENCHSTOP™ IGBT7 technology
  • Soft, fast recovery antiparallel diode for smooth switching behavior
  • Optimized for hard switching, two-level, and three-level topologies
  • Humidity robustness and qualified for industrial applications

Applications

  • Industrial UPS
  • EV-Charging
  • String inverter
  • Welding

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure compliance with JEDEC47/20/22 standards for industrial application validation. Confirm that the product is not intended for automotive use as it lacks AEC-Q100 or AEC-Q101 qualification. Check for updated datasheet revisions regarding switching values.

Selection Notes

Select this component for designs requiring high efficiency in hard-switching environments. The low saturation voltage reduces conduction losses, while the optimized switching characteristics minimize dynamic losses. Consider the thermal resistance values when designing heat sinks for continuous operation at high case temperatures.

Part Context

This part belongs to the TRENCHSTOP™ IGBT7 family, which integrates advanced silicon technology with an emitter-controlled diode. It is designed to replace previous generations like TRENCHSTOP™ 5 in high-power industrial applications, offering improved performance in terms of switching speed and thermal management within the PG-TO247-3-PLUS package.

Replacement Considerations

IKY120N65EH7XKSA1

FAQ

Is the IKQ120N65EH7 qualified for automotive applications?

No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents and is intended for industrial applications.

What is the internal emitter inductance value?

The internal emitter inductance is typically 13 nH, measured 5 mm from the case.

How does the diode behave during reverse recovery?

The integrated diode provides very soft, fast recovery characteristics, minimizing reverse recovery energy and peak current.

IKQ120N65EH7XKSA1IKQ120N65EH7XKSA1
$9.92
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