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The IKQ40N120CH3XKSA1 is a single N-channel IGBT from Infineon Technologies, utilizing TRENCHSTOP™ HighSpeed 3 technology. It features a TO-247-3 package with through-hole mounting. Key electrical parameters include a collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 80 A at 25°C. The saturation voltage (Vce(sat)) is 2 V. Maximum power dissipation (Pd) is 500 W. Operating temperature ranges from -40°C to +175°C. Gate-emitter voltage limits are ±20 V, with leakage current of 100 nA.
Verify the specific suffix XKSA1 against official Infineon documentation to confirm RoHS compliance status and packaging details. Ensure the ordering part number matches the exact datasheet revision required for the design. Cross-reference the manufacturer's latest availability status directly with authorized distributors or the manufacturer's portal prior to finalizing procurement plans.
Select this component when high voltage isolation and fast switching speeds are critical. The 1.2 kV rating supports high-voltage DC bus applications. Compare the 2 V saturation voltage against alternative devices to evaluate conduction losses. Consider the TO-247-3 package constraints for PCB layout and heatsinking requirements in the target application environment.
This device belongs to the TRENCHSTOP™ product family, representing Infineon's third-generation high-speed IGBT technology. It is designed to offer improved switching characteristics compared to previous generations while maintaining robustness. The part is distinct from other 1200V IGBTs by its specific speed class and package configuration.
Direct replacements must match the 1.2 kV voltage rating, 80 A current capacity, and TO-247-3 package. Verify that substitute components possess comparable switching energy values and gate charge specifications to ensure circuit compatibility without redesigning the gate drive network.