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The IKQ40N120CT2XKSA1 is a single IGBT in TRENCHSTOP™ 2 technology, copackaged with a soft, fast recovery full current rated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C case temperature. The typical collector-emitter saturation voltage is 1.75 V at 25°C. The device supports a maximum junction temperature of 175°C and offers a short circuit withstand time of 10 µs. It is housed in a PG-TO247-3-46 through-hole package.
Verify the component authenticity by checking the manufacturer's marking code K40MCT2 on the package. Confirm compliance with RoHS standards and Pb-free lead plating requirements. Ensure the ordering suffix XKSA1 matches the specific tape and reel or tube packaging configuration required for your assembly line. Cross-reference the datasheet revision to ensure all electrical characteristics align with your design specifications.
Select this component for applications requiring low conduction losses and robust short-circuit protection. The 1200 V rating suits medium-voltage industrial drives and renewable energy inverters. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive voltage and resistor values match the recommended operating conditions for optimal switching speed and EMI performance.
This part belongs to Infineon's TRENCHSTOP™ 2 family of IGBTs, which are designed for high-efficiency power switching. The IKQ40N120CT2 variant specifically targets general-purpose industrial applications where reliability and ease of paralleling are critical. It complements other devices in the portfolio by offering a balance between low saturation voltage and fast diode recovery characteristics.
Direct replacements within the same series include IKQ40N120CT2XKSA1. For higher current ratings, consider IKQ75N120CT2XKSA1. When substituting, verify pinout compatibility and thermal resistance parameters to ensure adequate cooling.
The device has a short circuit withstand time of 10 µs at a junction temperature of 175°C, with a maximum of 1000 allowed short circuits.
Yes, it offers easy paralleling capability due to the positive temperature coefficient in its VCE(sat).
The maximum operating junction temperature is 175°C.