IKQ75N120CH7XKSA1

Overview

The IKQ75N120CH7XKSA1 is a high-speed 1200 V IGBT from Infineon's TRENCHSTOP™ IGBT 7 family, packaged in PG-TO247-3-PLUS. It features a maximum collector current of 75 A and a saturation voltage of 1.7 V at 25°C. The device integrates an emitter-controlled diode with low reverse recovery charge (2.35 µC). Key electrical parameters include a gate charge of 518 nC, turn-off energy of 1.76 mJ, and a maximum junction temperature of 175°C.

Feature Summary

• High-speed switching performance optimized for hard switching topologies
• Co-packed full-rated current diode with soft-commutating characteristics
• Positive temperature coefficient in VCEsat enabling easy paralleling capability

Applications

• Industrial UPS systems
• EV-Charging infrastructure
• String inverters
• Welding equipment

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance status. Ensure that the procurement channel provides valid traceability data. Confirm JEDEC qualification requirements are met for industrial applications before finalizing orders.

Selection Notes

Select this component for designs requiring high efficiency in high-speed hard switching environments. The integrated diode reduces system complexity by eliminating external freewheeling components. Consider thermal management strategies given the 175°C maximum junction temperature rating.

Part Context

This part belongs to the TRENCHSTOP™ IGBT 7 series, representing advanced silicon technology. It is designed to replace older generations like IGBT4 or IGBT5 in demanding power conversion applications. The PG-TO247-3-PLUS package offers improved thermal performance compared to standard TO-247 variants.

Replacement Considerations

Direct replacements within the same family include IKQ75N120CH3. Verify pinout compatibility and thermal resistance values when substituting. Cross-reference datasheets for switching energy differences to ensure circuit stability.