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The IKQ75N120CS7XKSA1 is a short-circuit rugged 1200 V IGBT utilizing TRENCHSTOP™ IGBT 7 technology, co-packaged with a soft, fast recovery Emitter Controlled 7 diode. It features a collector-emitter saturation voltage of 2.0 V at Tvj = 175°C and supports an 8 µs short circuit withstand time. The device operates within a junction temperature range of -40 °C to +175 °C and is housed in a PG-TO247-3-PLUS-NN3.7 package.
Verify the exact ordering suffix against official Infineon documentation to ensure correct packaging and variant specifications. Confirm that the component meets JEDEC47/20/22 validation standards required for industrial applications before finalizing procurement plans.
Select this component for designs requiring robust short-circuit protection up to 8 µs and optimized performance in hard switching environments. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It is designed specifically for high-power industrial applications where reliability under fault conditions and efficient switching are critical requirements.
Consult official Infineon cross-reference guides for verified substitutes. Do not assume compatibility based solely on voltage or current ratings without verifying package dimensions and electrical characteristics.
The device supports a short circuit withstand time of 8 µs under specified conditions.
No, this product is not qualified according to AEC Q100 or AEC Q101 documents.
It is co-packaged with a soft, fast recovery Emitter Controlled 7 diode.