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The IKW15N120H3FKSA1 is a High Speed DuoPack IGBT in Trench and Fieldstop technology with a soft, fast recovery antiparallel diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 30 A at 25°C case temperature. The device supports a maximum junction temperature of 175°C and includes an internal emitter inductance of 13 nH measured 5 mm from the case.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and marking codes. Ensure the component meets target application requirements by consulting the latest datasheet revision. Confirm compliance with environmental directives such as RoHS and Pb-free specifications before procurement.
Select this component for applications requiring high-speed switching and low EMI characteristics. Consider the thermal resistance values and short-circuit withstand time when designing the cooling system. Evaluate the gate charge and switching energy losses to optimize drive circuit performance and efficiency.
This part belongs to the High Speed DuoPack series utilizing Trench and Fieldstop technology. It integrates an IGBT and an antiparallel diode in a single PG-TO247-3 package. The product spectrum includes PSpice models for simulation purposes.
Consult official Infineon documentation for confirmed substitute part numbers. Verify electrical parameters and pin compatibility before substitution.
The short-circuit withstand time is 10 µs under specified conditions.
No, this product is not qualified according to AEC-Q100 or AEC-Q101 documents.
The typical reverse recovery charge is 0.8 µC at 25°C junction temperature.