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The IKW20N60H3FKSA1 is a single IGBT with an integrated anti-parallel diode in the PG-TO247-3 package. It utilizes Trench and Fieldstop technology for high-speed switching. Key electrical parameters include a collector-emitter voltage of 600V, a continuous collector current of 40A at 25°C, and a saturation voltage of 1.95V. The device supports a maximum junction temperature of 175°C and offers a short-circuit withstand time of 5µs.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm tube packaging and compliance details. Ensure the component matches the exact datasheet revision required for your design. Cross-reference the manufacturer part number with authorized distributors to prevent counterfeit components. Confirm thermal management requirements align with the specified Rth(j-c) values.
Select this component for applications requiring high-speed switching and robust short-circuit capability up to 5µs. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the gate charge and switching energy losses against your driver capabilities and efficiency targets. Ensure the PG-TO247-3 package fits your PCB layout and mounting constraints.
This device belongs to the HighSpeed3 series from Infineon Technologies. It represents the third generation of Trench and Fieldstop IGBT technology. The product line is designed for industrial power control applications. It integrates a fast recovery diode to simplify circuit designs.
IKW20N60H3