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The IKW20N65ET7 is a TRENCHSTOP™ IGBT 7 with an integrated antiparallel diode in a PG-TO247-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a saturation voltage of 1.35 V, gate charge of 128 nC, and turn-off energy of 0.36 mJ. The device supports a maximum junction temperature of 175°C and short-circuit withstand times up to 5 µs.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and Pb-free lead plating specifications directly from the manufacturer's latest datasheet revision before finalizing procurement orders.
Select this component for applications requiring high efficiency and low switching losses within the 650 V range. Ensure the design accommodates the 40 A continuous current rating and verify that the thermal management system can handle the specified power dissipation limits under expected operating conditions.
This part belongs to the Infineon TRENCHSTOP™ IGBT 7 family, which utilizes advanced trench and fieldstop technologies. These devices are engineered to deliver superior performance in terms of conduction and switching losses compared to previous generations, making them suitable for modern industrial power conversion requirements.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching voltage and current ratings without verifying pinout, thermal resistance, and switching characteristics.