SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKW25N120T2FKSA1 is a single N-channel IGBT from the TrenchStop® 2nd generation series, housed in a PG-TO-247-3 package. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 50A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.7V at 25°C and supports a short circuit withstand time of 10μs. It integrates an anti-parallel Emitter Controlled HE Diode with soft recovery characteristics.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO-247-3 package outline and K25T1202 marking code. Confirm that the supply source provides valid traceability for this specific revision of the TrenchStop 2nd generation series.
Select this component for applications requiring robust performance up to 1200V with integrated diode recovery. Consider the 10μs short circuit withstand time for protection circuit design. Evaluate thermal resistance values for heat sink sizing based on the specified power dissipation limits at target case temperatures.
This part belongs to the TrenchStop® 2nd generation series designed for 1200V applications. It represents a discrete IGBT solution offering improved switching behavior compared to earlier generations. The series emphasizes temperature stability and ease of parallel operation for higher current requirements in industrial power electronics.
Consult official Infineon cross-reference guides for verified substitutes within the TrenchStop family. Verify pinout compatibility and electrical ratings before substituting with other TO-247 packages.
The device supports a short circuit withstand time of 10μs under specified conditions.
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE Diode.
Yes, the device exhibits a positive temperature coefficient in VCE(sat), facilitating stable behavior and easy paralleling.