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The IKW25T120 is a TrenchStop IGBT with an integrated anti-parallel diode, rated at 1200V collector-emitter voltage and 25A continuous DC collector current. It features a saturation voltage of 1.7V at 25°C and operates within a junction temperature range of -40°C to +150°C. The device supports a short circuit withstand time of 10µs and utilizes PG-TO-247-3 packaging.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm that the requested variant matches the exact electrical ratings and thermal characteristics defined in the datasheet before finalizing procurement orders.
Select this component for applications requiring robust short-circuit protection up to 10µs. Ensure the design accommodates the positive temperature coefficient of VCE(sat) for reliable parallel operation. Verify that the thermal management system can handle the specified power dissipation limits under expected operating conditions.
This part belongs to the TrenchStop Series from Infineon Technologies. It combines IGBT and Fieldstop technologies optimized for 1200V applications. The series is designed to offer tight parameter distribution and stable behavior across varying temperatures.
IKW25N120H3FKSA1
The maximum short circuit withstand time is 10µs.
Yes, the NPT technology provides a positive temperature coefficient in VCE(sat), which facilitates easy parallel switching.
The internal gate resistor (R_Gint) has a typical value of 8 Ω.