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The IKW30N60H3FKSA1 is a high-speed switching series third-generation IGBT in Trench and Fieldstop technology with a soft, fast recovery anti-parallel diode. It features a PG-TO247-3 package. Key parameters include a collector-emitter voltage of 600V, a DC collector current of 60A at 25°C (limited by maximum junction temperature), and a power dissipation of 187W at 25°C case temperature. The saturation voltage VCEsat is 1.95V at 25°C for 30A. Maximum operating junction temperature is 175°C.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm exact packaging or marking variations. Ensure the component meets RoHS compliance and Pb-free lead plating requirements as specified in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component for applications requiring high-speed switching capabilities within the 600V range. Consider the thermal resistance characteristics and the maximum junction temperature limit of 175°C when designing heat dissipation solutions. Evaluate the short circuit withstand time and safe operating area constraints for robust system protection.
This device belongs to Infineon's High-speed switching series third generation. It utilizes Trench and Fieldstop technology to achieve superior performance metrics compared to standard IGBTs. The integration of a fast recovery diode makes it suitable for hard-switching applications where low reverse recovery charge is critical.
IKW30N60H3
The maximum short circuit withstand time is 5 µs at a junction temperature of 150°C.
Yes, it includes a soft, fast recovery anti-parallel diode.
The maximum gate-emitter voltage is ±20 V.