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The IKW30N65ET7XKSA1 is a low-loss IGBT with an integrated anti-parallel diode, utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.35 V, a gate charge of 180 nC, and a short-circuit withstand time of up to 5 µs. Power dissipation reaches 188 W at 25°C.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm JEDEC qualification requirements match the target industrial application environment. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring high efficiency and low EMI in industrial power conversion. Consider the 650 V rating and 60 A current capacity relative to system load requirements. Evaluate the short-circuit withstand capability for robust protection schemes. Verify compatibility with standard TO-247 mounting hardware and PCB layouts.
This part belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It is designed as a low-loss Duopack solution combining an IGBT chip with an antiparallel diode in a single PG-TO247-3 package. The technology focuses on minimizing switching losses while maintaining high reliability for demanding industrial environments.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions. Verify that alternative devices meet the same JEDEC qualification standards for industrial applications.