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The IKW40N120CS6XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing TRENCHSTOP™ IGBT6 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. The saturation voltage is 1.85 V at 25°C. Maximum junction temperature is 175°C. Switching energy at 25°C includes Eon of 2.55 mJ and Eoff of 1.55 mJ. Gate charge is 285 nC. Power dissipation is 500 W at 25°C case temperature. The device is housed in a PG-TO247-3 package.
Verify the component against the official Infineon datasheet revision 2.1 for electrical parameters and thermal characteristics. Confirm that the ordering suffix XKSA1 corresponds to the specific tube packaging configuration required for the assembly process. Ensure compliance with JEDEC qualification standards relevant to industrial applications before finalizing procurement specifications.
Select this component for high-speed soft-switching applications requiring low EMI and high efficiency. The positive temperature coefficient facilitates parallel operation without complex current balancing circuits. Verify that the 1200V rating and 80A current capacity align with the system's peak load requirements and thermal management capabilities.
This part belongs to the sixth-generation high-speed soft-switching series from Infineon Technologies. It employs Trench and Fieldstop technology combined with a copackaged soft and fast recovery anti-parallel diode. The product spectrum includes PSpice models for simulation purposes.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum short circuit withstand time is 3 µs at a junction temperature of 150°C.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The internal emitter inductance measured 5 mm from the case is typically 13 nH.