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The IKW40N60DTPXKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's Trenchstop Performance series, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 67 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.6 V and supports a power dissipation of 246 W. Operating within a temperature range of -40°C to +175°C, it integrates an anti-parallel diode with a reverse recovery charge of 1230 nC.
Verify component authenticity by cross-referencing the manufacturer part number against official Infineon documentation. Confirm that the specific suffix matches the requested variant. Check the lifecycle status, as this model may be subject to discontinuation or obsolescence notices. Ensure all technical specifications align with the target application requirements before finalizing procurement decisions.
Select this component for applications requiring high voltage handling and moderate switching speeds up to 30 kHz. Evaluate thermal management needs based on the 246 W power dissipation rating. Consider the TO-247-3 package constraints for PCB layout and heatsinking. Compare switching energy values against alternative devices if higher frequency operation is required.
This IGBT belongs to the Trenchstop Performance family, which utilizes trench gate and field-stop technologies to balance efficiency and ruggedness. The TO-247-3 form factor provides a standardized mounting solution for industrial power electronics. The integrated diode simplifies circuit design for half-bridge configurations commonly found in AC drive systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for verified alternatives.