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The IKW50N120CS7XKSA1 is a short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device copacked with a soft and fast recovery Emitter Controlled 7 diode. It features a collector-emitter voltage of 1200 V, a DC collector current of 82 A at 25 °C, and a saturation voltage of 2.0 V at Tvj=175 °C. The component offers an 8 µsec short circuit withstand time and wide dv/dt controllability.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and marking details. Ensure compliance with JEDEC47/20/22 industrial application validation requirements. Confirm that operating conditions do not exceed 80% of maximum ratings for optimum lifetime and reliability as recommended by the manufacturer.
Select this component for designs requiring high short circuit ruggedness up to 8 µsec. The integrated soft recovery diode makes it suitable for applications needing controlled reverse recovery characteristics. Verify thermal management capabilities given the specified power dissipation limits across different case temperatures.
This part belongs to the TRENCHSTOP™ IGBT 7 family, utilizing advanced silicon technology for improved switching performance. It is designed specifically for industrial power electronics where robustness against electrical stress is critical. The PG-TO247-3 package facilitates efficient heat dissipation for through-hole mounting.
IKW50N120CS7
The maximum short circuit withstand time is 8 µsec under specified conditions.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.