IKW50N60H3FKSA1

$5.26

Description：IGBT TRENCH FS 600V 100A TO247-3
Series：TrenchStop®

SKU:3b7f781636dc Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 100A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
Power - Max：333 W
Switching Energy：2.36mJ
Input Type：Standard
Gate Charge：315 nC
Td (on/off) @ 25°C：23ns/235ns
Test Condition：400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr)：130 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IKW50N60H3FKSA1

Overview

The IKW50N60H3FKSA1 is a third-generation TRENCHSTOP IGBT in the High-speed switching series, manufactured by Infineon Technologies. It features a PG-TO247-3 package and integrates a soft, fast recovery anti-parallel diode. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 100 A at 25°C (50 A at 100°C), and a maximum junction temperature of 175°C. The device exhibits a typical collector-emitter saturation voltage of 1.85 V at 25°C and 50 A. Switching characteristics at 25°C with a 7 Ω gate resistor show turn-on energy of 1.45 mJ and turn-off energy of 0.91 mJ.

Feature Summary

Utilizes TRENCHSTOP technology to achieve low collector-emitter saturation voltage and reduced electromagnetic interference.
Integrates a soft, fast recovery anti-parallel diode for optimized reverse recovery performance.
Qualified according to JEDEC standards for target industrial applications.
Supports operation up to a maximum junction temperature of 175°C.

Applications

Uninterruptible power supplies
Welding converters
Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component matches the required PG-TO247-3 package type and lead plating specifications. Cross-reference the manufacturer part number with authorized distribution channels to validate authenticity and traceability before procurement.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within the 600 V voltage range. Consider the thermal resistance values and power dissipation limits relative to the expected case temperatures. Evaluate the short circuit withstand time and safe operating area requirements to ensure system reliability under fault conditions.

Part Context

This device belongs to Infineon's third-generation TRENCHSTOP IGBT family, specifically designed for industrial power control applications. It combines trench gate technology with fieldstop architecture to balance conduction and switching losses. The integration of an anti-parallel diode simplifies circuit design for inductive loads commonly found in power conversion systems.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific switching energy or diode recovery characteristics documented for this model.