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The IKW50N60TFKSA1 is a single IGBT with an integrated anti-parallel diode in the PG-TO247-3 package. It utilizes TRENCHSTOP and Fieldstop technology for 600V applications, offering low saturation voltage (1.5V typ.) and high switching speed. The device supports a maximum junction temperature of 175°C and withstands short-circuit currents for up to 5µs. Key electrical ratings include a collector-emitter voltage of 600V, continuous collector current of 80A at 25°C case temperature, and power dissipation of 333W.
Verify the specific ordering suffix 'FKSA1' against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO247-3 package outline and pin configuration. Cross-reference the datasheet revision date to validate technical parameters before integration into designs.
Select this component for 600V applications requiring low conduction losses and high switching frequencies. The positive temperature coefficient aids in thermal stability during parallel configurations. Evaluate the 5µs short-circuit withstand capability against system fault protection requirements. Consider the 175°C maximum junction temperature for high-temperature operational environments.
This part belongs to the TRENCHSTOP™ Series q from Infineon Technologies. It represents a Low Loss DuoPack IGBT designed for robust performance in medium-power electronics. The series emphasizes high switching speed and low electromagnetic interference through advanced silicon technology.
Public confirmed substitute part numbers are not available in the provided source material.
The device can withstand a short circuit for up to 5µs under specified conditions (VGE=15V, VCC≤400V, Tj≤150°C).
Yes, it includes an integrated soft, fast recovery anti-parallel Emitter Controlled HE diode.
The typical VCE(sat) is 1.5V at Tj=25°C.