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The IKW50N65H5AXKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, 80A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device offers low gate charge (116 nC) and optimized switching energy losses for hard-switching and resonant topologies.
Verify the specific suffix 'XKSA1' against the official datasheet to confirm packaging and marking details. Ensure the application environment respects the 175°C maximum junction temperature limit. Confirm that the PG-TO247-3 through-hole mounting torque does not exceed 0.6 Nm. Check for any design-not-recommended status updates from the manufacturer.
Select this component for designs requiring robust performance in both industrial and automotive contexts due to its AEC-Q101 qualification. The integrated RAPID 1 diode simplifies circuit design by eliminating the need for external anti-parallel diodes. Consider the thermal resistance values when designing heat sinks for continuous operation at high currents.
This part belongs to Infineon's High-Speed 5 FAST IGBT series within the TRENCHSTOP™ 5 family. It serves as a plug-and-play replacement for previous generation IGBTs while offering improved efficiency. The device is designed for industrial power control applications where high switching speeds and reliability are critical.
Official documentation identifies this device as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are listed in the provided source material.