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The IKW50N65H5FKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The saturation voltage is 1.65 V at 25°C. Maximum junction temperature is 175°C. Package: PG-TO247-3.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm package type, tape-and-reel specifications, and environmental compliance status. Ensure the component matches the exact datasheet revision required for your design. Confirm availability through authorized distributors or direct manufacturer channels.
Select this component for applications requiring high efficiency in hard switching and resonant topologies. The integrated RAPID 1 diode simplifies circuit design by providing a fast and soft recovery characteristic. Consider thermal management requirements given the maximum junction temperature rating of 175°C.
This part belongs to the TRENCHSTOP™ 5 series from Infineon Technologies. It represents the fifth generation of IGBT technology designed for industrial power control applications. The series offers improved efficiency compared to previous generations.
Officially documented as a plug-and-play replacement for previous generation IGBTs within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics when substituting older models.