IKW50N65RH5XKSA1

$6.43

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5

SKU:64328ce97b75 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：305 W
Switching Energy：230µJ (on), 180µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：22ns/180ns
Test Condition：400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW50N65RH5XKSA1

Overview

The IKW50N65RH5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 H5 family, co-packed with a half-rated 6th generation CoolSiC diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.65 V, a gate charge of 120 nC, and a maximum power dissipation of 305 W at 25°C. It utilizes a PG-TO247-3 package.

Feature Summary

Combines TRENCHSTOP 5 IGBT technology with a monolithic 6th generation CoolSiC diode for ultra-low switching losses.
Provides benchmark efficiency in hard switching topologies through optimized hybrid architecture.
Designed as a plug-and-play replacement for pure silicon devices while maintaining high thermal performance.

Applications

Industrial Switched-Mode Power Supplies (SMPS)
Industrial Uninterruptible Power Supplies (UPS)
Solar String Inverters
Energy Storage Systems
Chargers

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and ordering code against official Infineon documentation. Confirm that the specific suffix matches the requested package variant. Ensure compliance with RoHS standards and lead-free plating requirements specified in the datasheet before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency in hard-switching environments where reduced switching losses are critical. Consider the TO-247-3 package constraints and thermal resistance values when designing heat sinks. Evaluate the half-rated diode characteristics to ensure compatibility with the specific circuit topology and current demands.

Part Context

This device belongs to the TRENCHSTOP 5 H5 product line, representing an evolution in hybrid discrete technology. It integrates silicon carbide components directly with trench-gate IGBTs to enhance performance over traditional silicon-only solutions. The series targets industrial power conversion markets demanding higher density and efficiency.