IKW50N65WR5XKSA1

$3.92

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™

SKU:cc693b9019e7 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
Power - Max：282 W
Switching Energy：840µJ (on), 220µJ (off)
Input Type：Standard
Gate Charge：230 nC
Td (on/off) @ 25°C：45ns/417ns
Test Condition：400V, 25A, 16Ohm, 15V
Reverse Recovery Time (trr)：110 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW50N65WR5XKSA1

Overview

The IKW50N65WR5XKSA1 is a Reverse-Conducting IGBT from Infineon Technologies, featuring a monolithic body diode optimized for Zero Current Switching (ZCS) applications. It operates with a collector-emitter voltage of 650 V and a continuous collector current of 50 A at Tc=130°C (80 A at Tc=25°C). The device utilizes PG-TO247-3 packaging with Pb-free lead plating. Key electrical characteristics include a typical VCEsat of 1.4 V at 25°C and low turn-off energy (Eoff) of 0.22 mJ.

Feature Summary

Monolithic diode integrated for ZCS converter efficiency
Positive temperature coefficient in VCEsat for easy paralleling
Low EMI generation during switching operations

Applications

Zero Current Switching (ZCS) converters
Power Factor Correction (PFC)
Welding equipment

Procurement Notes

Verify the specific suffix XKSA1 against the manufacturer's latest documentation to confirm RoHS compliance and lead plating specifications. Ensure that the ordering information matches the exact package type PG-TO247-3. Cross-reference the datasheet revision history to validate the most recent technical parameters before finalizing procurement orders.

Selection Notes

Select this component for designs requiring integrated reverse-conduction capabilities to simplify circuit topology. The positive temperature coefficient ensures stable current sharing when multiple units are paralleled. Verify thermal management requirements based on the specified junction-to-case thermal resistance values for the intended operating environment.

Part Context

This part belongs to the WR5 series of Reverse-Conducting IGBTs designed specifically for high-efficiency soft-switching topologies. It combines the switching performance of an IGBT with the conduction properties of a diode in a single TO-247 package, reducing component count and parasitic inductance compared to discrete solutions.