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The IKW60N60H3FKSA1 is a single IGBT from the Trenchstop IGBT3 series, manufactured by Infineon Technologies. It utilizes silicon technology and features an integrated anti-parallel diode within a TO-247-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a saturation voltage of 1.85 V, a power dissipation capacity of 333 W, and a gate-emitter leakage current of 100 nA. It operates reliably between -40°C and +175°C.
Verify the specific suffix FKSA1 against official datasheets to confirm pinout and packaging details. Ensure the procurement channel provides valid traceability documentation. Confirm that the component meets RoHS compliance requirements as specified in the manufacturer's environmental declarations before finalizing orders.
Select this component when a balance of moderate current handling and low saturation voltage is required. The 600 V rating suits general industrial applications. Consider the thermal resistance of the TO-247-3 package during heatsink design. Compare switching energy values against system constraints to ensure compatibility with drive circuitry capabilities.
This part belongs to Infineon’s Trenchstop IGBT3 family, which focuses on improving efficiency in medium-power applications. The series is characterized by optimized trench gate structures and field-stop technology. These devices are engineered to provide superior switching characteristics compared to previous generations while maintaining reliability in demanding power electronics environments.
The IKW60N60H3 is listed as an alias or predecessor variant. Verify pin compatibility and electrical specifications before substitution. Cross-reference with other 600V 50A TO-247-3 IGBTs only if exact parameter matching is confirmed via official comparison tools.