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The IKW75N60TAFKSA1 is a single IGBT with an integrated anti-parallel diode in the PG-TO247-3 package. It utilizes TRENCHSTOP™ and Fieldstop technology for low conduction losses. Key electrical ratings include a collector-emitter voltage of 600V, a DC collector current of 80A at 25°C, and a maximum junction temperature of 175°C. The device features a typical VCE(sat) of 1.5V, a short circuit withstand time of 5µs, and a power dissipation of 428W.
Verify the specific suffix FKSA1 against official Infineon documentation to confirm exact ordering details and compliance status. Ensure the component matches the required PG-TO247-3 package dimensions and lead configuration. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement.
Select this component for applications requiring robust short-circuit withstand capability and stable thermal behavior. The positive temperature coefficient aids in safe paralleling. Evaluate the switching frequency requirements against the specified energy loss characteristics. Confirm that the gate drive voltage aligns with the recommended 15V operation for optimal performance.
This device belongs to the TRENCHSTOP™ Series by Infineon Technologies. It combines IGBT and Fieldstop technologies to achieve low saturation voltage. The product spectrum includes various packages and variants, with simulation models available for design integration. The component is qualified according to JEDEC standards for target industrial applications.
IKW75N60TXK
The short circuit withstand time is 5µs under conditions of VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
Yes, the device includes an integrated internal gate resistor.
The maximum operating junction temperature is 175°C.