IKW75N65ES5XKSA1

$5.70

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™

SKU:2a989eb3944c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 80A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 75A
Power - Max：395 W
Switching Energy：2.4mJ (on), 950µJ (off)
Input Type：Standard
Gate Charge：164 nC
Td (on/off) @ 25°C：40ns/144ns
Test Condition：400V, 75A, 18Ohm, 15V
Reverse Recovery Time (trr)：85 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW75N65ES5XKSA1

Overview

The IKW75N65ES5XKSA1 is a single IGBT from the TRENCHSTOP™ 5 family, packaged in PG-TO247-3. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The saturation voltage is 1.42 V at 75 A and 25°C. It includes a copackaged RAPID 1 diode with a forward voltage of 1.50 V. Maximum power dissipation is 395 W at 25°C case temperature. Operating junction temperature ranges from -40°C to +175°C.

Feature Summary

High-speed S5 technology designed for smooth switching in both hard and soft switching applications.
Integrated full-current rated RAPID 1 fast and soft antiparallel diode.
Low gate charge (QG) to minimize drive requirements and switching losses.
Qualified according to JEDEC standards for industrial target applications.

Applications

Resonant converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Ensure the component matches the required thermal resistance and pinout configuration for the intended PCB layout. Cross-reference the datasheet revision date to validate electrical characteristics against the latest manufacturing specifications.

Selection Notes

Select this component for designs requiring low saturation voltage and integrated fast recovery diodes. Consider the thermal resistance values when designing heat sinks for continuous operation. Evaluate the switching energy losses relative to the specific gate resistance and bus voltage conditions of the target circuit topology.

Part Context

This device belongs to the TRENCHSTOP™ 5 series of silicon IGBTs manufactured by Infineon Technologies. It utilizes trench gate and field-stop technology to achieve high efficiency. The product is designated for industrial power control applications and is distinct from automotive-qualified variants.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs within the same voltage and current ratings. Verify pin compatibility and thermal performance before substituting older discrete models.