IKWH40N65EH7XKSA1

$5.07

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™

SKU:ff47846d7869 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 40A
Power - Max：208 W
Switching Energy：970µJ (on), 420µJ (off)
Input Type：Standard
Gate Charge：81 nC
Td (on/off) @ 25°C：18ns/141ns
Test Condition：400V, 40A, 12.5Ohm, 15V
Reverse Recovery Time (trr)：74 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-32
Grade：-
Qualification：-

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IKWH40N65EH7XKSA1

Overview

The IKWH40N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum saturation voltage of 1.65 V, a gate charge of 81 nC, and a power dissipation of 208 W at 25°C case temperature. It is housed in a PG-TO247-3 package.

Feature Summary

Integrates high-speed IGBT7 technology with a soft, fast recovery Emitter Controlled 7 (EC7) diode for optimized switching performance.
Designed for smooth switching behavior and low switching losses in hard-switching applications.
Features humidity robustness and optimized characteristics for two-level and three-level topologies.

Applications

Industrial UPS systems
EV-Charging infrastructure
String inverters
Welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm that the component meets JEDEC47/20/22 standards for industrial application qualification. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet tables.

Selection Notes

Select this component for applications requiring high switching frequencies and low conduction losses. The TO-247 HCC package provides increased clearance and creepage distances suitable for demanding environments. Consider the trade-off between the low saturation voltage and switching energy when designing gate drive circuits.

Part Context

This part belongs to the TRENCHSTOP™ IGBT7 family, specifically the H7 series designed for high-speed applications. It represents a generation of silicon-based discrete power semiconductors manufactured using micro-trench gate technology to enhance efficiency compared to previous generations.