IKWH50N65EH7XKSA1

$5.62

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™

SKU:61502b9411df Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 50A
Power - Max：249 W
Switching Energy：1.27mJ (on), 650µJ (off)
Input Type：Standard
Gate Charge：102 nC
Td (on/off) @ 25°C：19ns/147ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：76 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-32
Grade：-
Qualification：-

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IKWH50N65EH7XKSA1

Overview

The IKWH50N65EH7XKSA1 is a 650 V TRENCHSTOP™ IGBT7 with an integrated Emitter Controlled 7 diode in a TO-247 HCC package. It features a maximum collector current of 80 A at 25 °C and a typical saturation voltage of 1.4 V. Switching losses are minimized, with turn-on energy at 1.27 mJ and turn-off energy at 0.65 mJ under standard test conditions. The device operates within a junction temperature range of -40 °C to 175 °C.

Feature Summary

High-speed switching capability combined with low collector-emitter saturation voltage for optimized efficiency.
Integrated soft and fast recovery antiparallel diode providing smooth switching behavior.
Optimized specifically for hard switching applications in two-level and three-level topologies.
Enhanced humidity robustness ensuring reliability across diverse industrial environments.

Applications

Industrial UPS systems
EV-Charging infrastructure
String inverters
Welding equipment

Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to ensure correct packaging and marking specifications. Confirm that the component meets JEDEC47/20/22 standards for industrial application validation before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high-speed switching alongside low conduction losses. Ensure the thermal management system accommodates the specified junction-to-case thermal resistance values to maintain safe operating temperatures during continuous operation.

Part Context

This part belongs to the TRENCHSTOP™ IGBT7 family, representing advanced silicon technology for power conversion. It integrates a field-stop trench gate structure with a specialized emitter-controlled diode to reduce switching stress and improve overall system performance in demanding power electronics applications.

Replacement Considerations

Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based on generic package or voltage ratings alone without verifying specific electrical parameters and pin configurations.