SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKY120N120CH7XKSA1 is a silicon IGBT with an integrated anti-parallel diode, belonging to the TRENCHSTOP™ IGBT7 H7 series. It utilizes a TO-247PLUS 4-pin package and supports a maximum collector-emitter voltage of 1200 V. The device provides a continuous collector current rating of 120 A at 25°C and features a typical saturation voltage of 2.3 V. Switching characteristics include a turn-on energy of 3.6 mJ and a turn-off energy of 2.8 mJ under standard test conditions.
Verify the specific suffix XKSA1 against official Infineon documentation to confirm the exact tube packaging configuration and RoHS compliance status. Ensure that the ordering information matches the required industrial qualification standards before finalizing procurement orders.
Select this component when a high-voltage 1200 V rating and 120 A continuous current capacity are required. The integrated diode simplifies circuit design by eliminating external components. Consider the thermal management requirements associated with the specified switching energies in the target application environment.
This discrete semiconductor belongs to the broader TRENCHSTOP™ IGBT7 family manufactured by Infineon Technologies. The product line focuses on improving efficiency in power conversion applications through advanced trench gate technology. The specific model represents a high-current variant designed for robust industrial environments.
Consult official cross-reference lists for verified substitutes. Direct replacements must maintain identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the host system.
The fourth pin serves as a Kelvin emitter connection, which bypasses the main emitter lead inductance to enhance switching speed and reduce switching energy losses.
Yes, the IKY120N120CH7XKSA1 integrates an anti-parallel diode, allowing it to conduct reverse current without requiring external components.