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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 160A TO247-4
- Series：TRENCHSTOP™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：480 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 120A
- Power - Max：498 W
- Switching Energy：1.7mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：244 nC
- Td (on/off) @ 25°C：25ns/175ns
- Test Condition：400V, 120A, 10Ohm, 15V
- Reverse Recovery Time (trr)：64 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：PG-TO247-4-2
- Grade：-
- Qualification：-
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Overview
The IKY120N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 160 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.65 V and a gate-emitter threshold voltage typically around 3.85 V. Switching characteristics are optimized for hard switching applications.
Feature Summary
- High-speed operation combined with low collector-emitter saturation voltage
- Soft and fast recovery Emitter Controlled 7 (EC7) anti-parallel diode
- Smooth switching behavior suitable for two- and three-level topologies
- Humidity robustness ensuring reliability in industrial environments
Applications
- Industrial UPS systems
- Electric Vehicle (EV) charging infrastructure
- String inverters
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm that the component meets JEDEC qualification standards for industrial applications as stated in the datasheet. Ensure that design parameters remain within the recommended operating limits to maintain product lifetime and reliability.
Selection Notes
Select this component for designs requiring high efficiency in hard-switching scenarios. The integrated EC7 diode reduces reverse recovery losses compared to standard configurations. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the device's suitability for both two-level and three-level converter topologies.
Part Context
This part belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It is designed as a discrete power semiconductor device intended for industrial power conversion applications. The technology focuses on minimizing switching energy losses while maintaining low conduction losses.
Replacement Considerations
Consult official Infineon documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.
