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The IKY140N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full-rated current, soft-commutating, ultra-fast recovery emitter-controlled diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 140 A at 25°C. The saturation voltage is 1.7 V at 25°C and 2 V at 175°C. Maximum junction temperature is 175°C. Gate charge is 1032 nC. Turn-on energy is 2.64 mJ and turn-off energy is 3.9 mJ at 25°C. Diode forward voltage is 2.5 V at 25°C. Reverse recovery charge is 4.14 µC at 25°C.
Verify the exact ordering suffix against official Infineon documentation to ensure correct package and marking specifications. Confirm RoHS compliance status and Pb-free lead plating requirements prior to procurement. Ensure industrial application qualification aligns with JEDEC standards as specified in the datasheet.
Select this component for applications requiring high efficiency in high-speed hard switching topologies. Consider the positive temperature coefficient in VCEsat for easy paralleling capabilities. Evaluate thermal resistance values for heat sink design to maintain junction temperature within the 175°C maximum limit.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It utilizes advanced trench gate technology to achieve high switching speeds and low conduction losses. The PG-TO247-4-PLUS package provides robust mechanical stability and enhanced thermal performance for industrial power electronics applications.
IKY140N120CH7
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The internal emitter inductance measured 5 mm from the case is 13 nH.