IKY75N120CH3XKSA1

Description：IGBT 1200V 150A TO247-4
Series：-

SKU:f180f06ca626 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 150A TO247-4
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 75A
Power - Max：938 W
Switching Energy：3.4mJ (on), 2.9mJ (off)
Input Type：Standard
Gate Charge：370 nC
Td (on/off) @ 25°C：38ns/303ns
Test Condition：600V, 75A, 6Ohm, 15V
Reverse Recovery Time (trr)：292 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4
Grade：-
Qualification：-

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IKY75N120CH3XKSA1

Overview

The IKY75N120CH3XKSA1 is a third-generation Highspeed IGBT featuring H3 technology and a Kelvin emitter pin package. It has a collector-emitter voltage of 1200 V, a continuous collector current of 150 A at 25°C, and a saturation voltage of 2 V. The device supports a maximum junction temperature of 175°C and includes an anti-parallel Emitter Controlled diode with a forward voltage of 1.9 V. Switching losses are 3.4 mJ (turn-on) and 2.9 mJ (turn-off) at 25°C. It offers a short-circuit withstand time of 10 µs and is housed in a PG-TO247-4-2 through-hole package.

Feature Summary

Ultra-low switching losses achieved through the combination of Highspeed H3 technology and a Kelvin emitter pin package.
High efficiency in hard switching and resonant topologies due to optimized dynamic characteristics.
Robust short-circuit protection capability with a 10 µs withstand time at a junction temperature of 175°C.
Easy paralleling capability provided by the positive temperature coefficient of the collector-emitter saturation voltage.

Applications

Industrial UPS systems
Chargers
Energy Storage systems
Three-level Solar String Inverters

Procurement Notes

Verify the component against the official Infineon datasheet revision 2.3 to confirm technical specifications and compliance status. Ensure that the ordering suffix XKSA1 corresponds to the specific tube packaging format required for your assembly process. Cross-reference the manufacturer part number with authorized distribution channels to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-speed switching and low loss in industrial power conversion. The 1200 V rating and 150 A current capacity suit medium-to-high power inverters. Consider the thermal resistance values when designing heat sinks, as the device operates up to 175°C. Verify gate drive requirements against the specified gate charge and threshold voltage parameters for optimal performance.

Part Context

This component belongs to the Infineon Highspeed 3 series, utilizing TRENCHSTOP™ technology. It is designed as a discrete Insulated Gate Bipolar Transistor with an integrated anti-parallel diode. The product line targets demanding industrial applications where switching speed and efficiency are critical for system performance and energy conservation.

Replacement Considerations

Direct replacements within the same family include IKY75N120CH3 without the ordering suffix. For different packaging or slight parameter variations, consult the official Infineon selection guide for compatible IGBTs with similar voltage and current ratings.

FAQ

What is the short-circuit withstand time for this IGBT?

The device can withstand a short circuit for 10 µs at a junction temperature of 175°C, with a maximum of 1000 allowed short circuits under specified conditions.