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The IKZ50N65EH5 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, 85A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device utilizes a Kelvin emitter pin for ultra-low loss switching and operates in PG-TO247-4 packages.
Verify the specific ordering suffix against official Infineon documentation to ensure correct package and marking specifications. Confirm that the component meets RoHS compliance requirements and Pb-free lead plating standards before integration into manufacturing processes.
Select this component for designs requiring high efficiency in hard switching or resonant topologies. Ensure gate drive circuits accommodate the Kelvin emitter pin separately from the main emitter to prevent malfunction and maximize switching speed benefits.
This part belongs to the High Speed Series Fifth Generation (H5) lineup from Infineon Technologies. It serves as a plug-and-play replacement for previous generation IGBTs while offering improved efficiency and lower gate charge characteristics suitable for modern industrial power control systems.
Official datasheets indicate it is designed as a direct replacement for previous generation IGBTs. Verify pin compatibility and thermal resistance values when substituting older models.