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The IKZ50N65ES5 is a TRENCHSTOP™ 5 soft-switching IGBT copacked with a full current rated RAPID 1 fast and soft antiparallel diode. It features high-speed S5 technology for hard and soft switching, offering very low VCEsat of 1.35V at nominal current. The device has a 650V breakdown voltage, 80A DC collector current, and operates up to a maximum junction temperature of 175°C in a PG-TO247-4 package.
Verify the specific part number against official Infineon documentation to ensure compatibility with target designs. Confirm that the application does not require automotive qualification, as this product is not qualified according to AEC Q100 or AEC Q101 standards. Check for any design-in restrictions or recommended operating conditions outlined in the datasheet.
Select this component for industrial power conversion requiring soft-switching capabilities. Ensure the thermal management system supports the specified power dissipation limits. Verify that the gate drive circuitry aligns with the required VGE thresholds and internal emitter inductance specifications for optimal switching performance.
This discrete IGBT belongs to the TRENCHSTOP™ 5 family, designed to offer plug-and-play replacement for previous generation IGBTs. It combines silicon IGBT technology with a specialized antiparallel diode to minimize switching losses and electromagnetic interference in high-frequency industrial applications.
Officially documented as a plug-and-play replacement for previous generation IGBTs within the same voltage and current class. Cross-referencing with legacy Infineon models requires verification of pinout compatibility and thermal resistance parameters.
No, the emitter and Kelvin emitter pins are not exchangeable. Their exchange might lead to malfunction.
The maximum operating junction temperature is 175°C.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.