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The IKZ75N65EH5XKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage, 90A DC collector current at 25°C, and a maximum junction temperature of 175°C. The device utilizes a Kelvin emitter pin for ultra-low loss switching and offers best-in-class efficiency in hard switching and resonant topologies.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure that the Kelvin emitter pin is correctly identified during PCB layout, as it is not exchangeable with the standard emitter pin. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring high switching frequencies and low conduction losses. The integrated RAPID 1 diode reduces system complexity by eliminating the need for an external anti-parallel diode. Consider the TO-247-4 package for its robust mounting options and efficient heat dissipation capabilities suitable for industrial power control environments.
This part belongs to the TRENCHSTOP™ 5 series, representing the fifth generation of Infineon's high-speed IGBT technology. It is designed to replace previous generation IGBTs while offering improved performance metrics. The product spectrum includes various variants optimized for different switching speeds and current ratings within the same family.
Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pin compatibility, specifically ensuring the Kelvin emitter pin is correctly utilized, as it is not exchangeable with the standard emitter pin.