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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 140A TO247-4
- Series：TRENCHSTOP™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 100A
- Power - Max：429 W
- Switching Energy：1.24mJ (on), 1.22mJ (off)
- Input Type：Standard
- Gate Charge：207 nC
- Td (on/off) @ 25°C：32ns/240ns
- Test Condition：400V, 100A, 10Ohm, 15V
- Reverse Recovery Time (trr)：62 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：PG-TO247-4-3
- Grade：-
- Qualification：-
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Overview
The IKZA100N65EH7XKSA1 is a single IGBT with an anti-parallel diode in a PG-TO247-4 package. It utilizes Infineon's TRENCHSTOP™ IGBT7 technology and features a soft, fast recovery Emitter Controlled 7 diode. Key electrical parameters include a collector-emitter voltage of 650 V, a continuous collector current of 140 A at 25°C, and a saturation voltage of 1.6 V max at 100 A. The device supports a maximum power dissipation of 429 W and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Employs TRENCHSTOP™ IGBT7 technology for high speed and low saturation voltage
- Integrates a soft, fast recovery antiparallel diode for smooth switching behavior
- Optimized for hard switching applications in two-level and three-level topologies
- Demonstrates humidity robustness suitable for industrial environments
Applications
- Industrial UPS systems
- EV-Charging infrastructure
- String inverters
- Welding equipment
Procurement Notes
Verify the specific ordering suffix XKSA1 against official documentation to confirm package and marking details. Confirm JEDEC qualification status for industrial application requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under varying case temperatures.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses in the 650 V class. Consider the integrated diode characteristics for reverse recovery performance. Evaluate gate resistor requirements to balance switching speed and electromagnetic interference based on the provided characteristic diagrams.
Part Context
This part belongs to the TRENCHSTOP™ IGBT7 family, designed for high efficiency and reliability. It represents an evolution in silicon IGBT technology, offering improved switching characteristics compared to previous generations while maintaining compatibility with standard TO-247 mounting solutions.
Replacement Considerations
Consult official replacement guides for direct substitutes. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or older Infineon series.
