IKZA40N120CH7XKSA1

$7.57

Description：IGBT TRENCH FS 1200V 95A TO247-4
Series：TRENCHSTOP™

SKU:8f3e04e507a9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 95A TO247-4
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：95 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 40A
Power - Max：330 W
Switching Energy：970µJ (on), 1.01mJ (off)
Input Type：Standard
Gate Charge：290 nC
Td (on/off) @ 25°C：34ns/360ns
Test Condition：-
Reverse Recovery Time (trr)：90 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4-U02
Grade：-
Qualification：-

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IKZA40N120CH7XKSA1

Overview

The IKZA40N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full-rated current, soft-commutating, ultra-fast recovery emitter-controlled diode. It operates in a TO-247-4 package with a maximum junction temperature of 175°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V at 25°C and a gate charge of 290 nC. The integrated diode exhibits a forward voltage of 2.5 V and a reverse recovery charge of 1.51 µC at 25°C.

Feature Summary

Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode
Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type)
Easy paralleling capability due to positive temperature coefficient in VCEsat

Applications

Industrial UPS
EV-Charging
String inverter
Welding

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and Pb-free lead plating requirements for your assembly process. Ensure the component meets industrial application qualification standards per JEDEC47/20/22 before integration into final designs.

Selection Notes

Select this component for applications requiring optimized efficiency in high-speed hard switching topologies such as 2-level inverters or 3-level NPC T-type converters. The positive temperature coefficient in VCEsat facilitates easy paralleling for higher current capacity. Consider the thermal resistance values and maximum operating temperatures when designing the heat dissipation system.

Part Context

This part belongs to the TRENCHSTOP™ IGBT 7 family, which utilizes advanced trench gate technology to achieve superior switching performance. The inclusion of an emitter-controlled diode enhances overall system efficiency by reducing reverse recovery losses. This generation of devices represents a significant advancement in power semiconductor technology for industrial and automotive applications.