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IMT65R50M2HXUMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IMT65R50M2HXUMA1. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IMT65R50M2HXUMA1
- Description：IMT65R50M2HXUMA1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IMT65R50M2HXUMA1
FET, MOSFET Arrays Overview
The IMT65R50M2HXUMA1 is a silicon carbide (SiC) MOSFET from Infineon Technologies, belonging to the CoolSiC™ G2 generation. It features a 650 V drain-source voltage rating and a maximum on-resistance of 50 mΩ at 25°C. The device supports a continuous drain current of 48.1 A at 25°C and operates within a junction temperature range of -55°C to 175°C. Packaged in a TOLL format for surface mount technology, it offers a thermal resistance from junction to case of 0.63 K/W.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC™ G2 technology for enhanced switching performance and reduced conduction losses.
- Designed with a TOLL package to facilitate efficient heat dissipation and robust surface-mount integration.
- Engineered for industrial applications requiring high reliability and extended operating temperature ranges.
FET, MOSFET Arrays Applications
- Industrial motor drives
- DC-DC converters
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the exact part number against official Infineon documentation, as the provided model may differ from standard commercial listings. Confirm availability status and lead times directly with authorized distributors or the manufacturer. Ensure compliance with RoHS standards and check for any specific handling requirements related to moisture sensitivity levels before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for designs prioritizing low on-resistance and high thermal efficiency in compact form factors. Consider the TOLL package benefits for PCB layout optimization and thermal management. Evaluate the 650 V rating against system voltage requirements and ensure gate drive compatibility with the specified threshold characteristics for optimal switching performance.
FET, MOSFET Arrays Part Context
This device is part of Infineon's CoolSiC™ portfolio, specifically the second-generation 650 V series. It represents an advancement over previous M1 generations, offering improved figure-of-merit values. The product line targets high-efficiency power conversion systems where size reduction and thermal performance are critical design constraints.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other CoolSiC™ G2 devices in the same voltage class. Verify pinout compatibility and thermal characteristics when substituting with similar packages like TO-247 variants if board space allows. Check datasheet revisions for any parameter updates.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
