IMZA75R020M1HXKSA1

$13.91

Description：SILICON CARBIDE MOSFET
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube

SKU:c72ddd300219 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMZA75R020M1HXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMZA75R020M1HXKSA1

Description：SILICON CARBIDE MOSFET
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：75A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：15V, 20V
Rds On (Max) @ Id, Vgs：18mOhm @ 32.5A, 20V
Vgs(th) (Max) @ Id：5.6V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 18 V
Vgs (Max)：+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2217 pF @ 500 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IMZA75R020M1HXKSA1

IMZA75R020M1HXKSA1

Single FETs, MOSFETs Overview

The IMZA75R020M1HXKSA1 is a 750 V CoolSiC™ G1 N-channel MOSFET in a PG-TO247-4 package. It features a maximum on-state resistance of 27 mΩ at 25°C and a typical value of 20 mΩ. The device supports a continuous drain current of 75 A at 25°C and a peak pulse current of 261 A. Key dynamic parameters include a total gate charge of 67 nC, turn-on delay of 13 ns, rise time of 15 ns, turn-off delay of 29 ns, and fall time of 9 ns. It operates within a junction temperature range of -55°C to +175°C with a power dissipation of 278 W.

Single FETs, MOSFETs Feature Summary

Highly robust 750 V technology verified by 100% avalanche testing for enhanced reliability under harsh conditions.
Best-in-class RDS(on) x Qfr product combination ensuring superior efficiency during hard switching operations.
Unique combination of low Crss/Ciss capacitances and high VGS(th) providing robustness against parasitic turn-on.
Integrated driver source pin available to facilitate improved gate control and reduced switching losses.

Single FETs, MOSFETs Applications

EV charging infrastructure
Solar PV inverters
Uninterruptible power supplies (UPS)
Energy storage and battery formation systems
Telecom and server switch-mode power supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix KSA1 to confirm the tube packaging format and ensure compliance with RoHS directives. Confirm that the application design strictly adheres to the recommended gate-source voltage operating range (-2 V to +20 V) to prevent exceeding maximum ratings over the device lifetime. Ensure proper mounting torque between 60 Ncm using M3 or M3.5 screws is applied to maintain thermal performance.

Single FETs, MOSFETs Selection Notes

Select this component when system requirements demand high breakdown voltage combined with low conduction losses. The separate driver source pin allows for optimized gate drive loop layout, reducing stray inductance. Consider the thermal resistance of 0.54 °C/W for heatsink sizing. Validate that the target application does not exceed the 80% derating recommendation for optimal lifetime.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolSiC™ Power Device 750 V Generation 1 family. It utilizes silicon carbide material characteristics developed over decades to offer a unique combination of performance and reliability. The device is fully qualified according to JEDEC standards for industrial applications, distinguishing it from automotive-grade variants in the same voltage class.