IPB042N10N3GE8187ATMA1

Description：MOSFET N-CH 100V 100A D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:acbe83a9c729 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPB042N10N3GE8187ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 100A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB042N10N3GE8187ATMA1

Description：MOSFET N-CH 100V 100A D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：117 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8410 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：214W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1

Single FETs, MOSFETs Overview

The IPB042N10N3GE8187ATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 series, designed for high-efficiency power switching. It features a 100V drain-source voltage rating and supports a continuous drain current of 100A at case temperature. The device exhibits a low on-resistance of 4.2 milliohms, minimizing conduction losses. Packaged in a D2PAK-3 (TO-263-3) surface-mount housing, it operates within a junction temperature range of -55°C to +175°C. Key electrical characteristics include a gate charge of 88nC and a maximum power dissipation of 214W.

Single FETs, MOSFETs Feature Summary

OptiMOS 3 technology provides optimized performance for low on-resistance and fast switching speeds.
Enhanced thermal stability allows reliable operation up to a maximum junction temperature of 175°C.
Robust avalanche capability ensures durability under transient overload conditions.

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'E8187' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required D2PAK-3 footprint and pinout configuration for your PCB design. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-channel MOSFET with high current handling is required. The 4.2 milliohm on-resistance makes it suitable for applications prioritizing efficiency. Consider the D2PAK-3 package for adequate heat dissipation without requiring extensive external cooling solutions in standard industrial environments.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family, representing Infineon's silicon-based power transistor generation. It shares architectural similarities with other 100V devices in the series but offers specific current and resistance characteristics tailored for general-purpose power switching applications.