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IPB08CNE8N G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 85V 95A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB08CNE8N G
- Description：MOSFET N-CH 85V 95A D2PAK
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：85 V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.2mOhm @ 95A, 10V
- Vgs(th) (Max) @ Id：4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：99 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6690 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB08CNE8N G
Single FETs, MOSFETs Overview
The IPB08CNE8N G is an N-channel OptiMOS™2 power transistor with a maximum drain-source voltage of 80 V and a typical on-resistance of 8 mΩ at 10 V gate drive. It supports a continuous drain current of 35 A and a pulsed current of 140 A, dissipating up to 160 W of power. The device features a logic-level gate threshold range of 1.2 V to 2 V and operates within a junction temperature range of -55 °C to 175 °C.
Single FETs, MOSFETs Feature Summary
- Optimized low on-state resistance for high efficiency
- Logic level gate drive capability for direct microcontroller interfacing
- Enhanced avalanche ruggedness for robust operation
- Lead-free packaging compliant with RoHS standards
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Synchronous rectification applications
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required (D²PAK, I²PAK, or TO-220) as the base part number covers multiple physical configurations. Confirm that the ordering suffix matches the desired thermal and mechanical specifications. Ensure compatibility with the target PCB footprint and mounting requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses at 80 V. The logic-level gate threshold simplifies driver design by allowing direct connection to standard logic outputs. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance to ensure reliable operation under load.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™2 family, designed for general-purpose power switching. It serves as a high-performance alternative to standard MOSFETs in low-voltage applications. The product line emphasizes improved switching characteristics and thermal stability for modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include IPI08CNE8N G and IPP08CNE8N G, which share identical electrical specifications but differ in package style.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
