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IPB65R190CFDAATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 17.5A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB65R190CFDAATMA1
- Description：MOSFET N-CH 650V 17.5A D2PAK
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1850 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：151W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB65R190CFDAATMA1
Single FETs, MOSFETs Overview
The IPB65R190CFDAATMA1 is a CoolMOS™ CFDA N-channel power MOSFET manufactured by Infineon Technologies. It features a 650 V drain-source voltage rating and a continuous drain current of 17.5 A at case temperature. The device exhibits a maximum on-resistance of 190 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 68 nC and an input capacitance of 1850 pF. It operates within a junction temperature range of -40°C to 150°C and is housed in a PG-TO263-3 (D2PAK) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes CoolMOS™ CFDA technology for optimized switching performance and low conduction losses.
- Certified to AEC-Q101 standards, ensuring reliability for automotive applications.
- Designed with high ruggedness and robust avalanche capability for demanding power environments.
Single FETs, MOSFETs Applications
- Automotive power supply systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific automotive qualification requirements if intended for such use. Cross-reference datasheet revisions to ensure compatibility with existing design constraints and thermal management strategies.
Single FETs, MOSFETs Selection Notes
Select this component when a 650V rating is required alongside moderate current handling capabilities. The PG-TO263-3 package offers a balance between thermal dissipation and board space efficiency. Consider the specific gate charge characteristics for driving circuit compatibility and switching frequency optimization.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's CoolMOS™ CFDA family, which represents advanced superjunction technology for 650V applications. It serves as a successor or variant within the broader CoolMOS portfolio, offering improved figure-of-merit compared to previous generations while maintaining automotive-grade reliability standards.
Single FETs, MOSFETs Replacement Considerations
IPB65R190CFD is a related legacy version in the same series but lacks the ATMA1 suffix indicating specific automotive packaging and qualification details.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
